shantou huashan electronic devices co.,ltd . applications medium frequency power amplifier medium seed switching . absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv cbo collector-base breakdown voltage 120 v i c =10 a, i e =0 bv ceo collector-emitter breakdown voltage 100 v i c =1ma, i b =0 bv ebo emitter-base breakdown voltage 6 v i e =10 a i c =0 i cbo collector cut-off current 100 na v cb =100v, i e =0 i ebo emitter cut-off current 100 na v eb =4v, i c =0 h fe 1 dc current gain 100 400 v ce =5v, i c =100ma h fe 2 dc current gain 30 v ce =5v, i c =1a v ce(sat) collector- emitter saturation voltage 0.1 0.3 v i c =500ma, i b =50ma v be(sat) base-emitter saturation voltage 0.85 1.2 v i c =500ma, i b =50ma t on turn-on time 80 ns t stg storage time 1000 ns see specified test circuit t f fall time 50 ns f t current gain-bandwidth product 120 mhz v ce =10v, i c =50ma, cob output capacitance 11 pf v cb =10v, i e =0,f=1 mhz h fe classification r s t 100 200 140 280 200 400 npn s i l i c o n t r a n s i s t o r t stg storage temperature - 55~150 t j junction temperature 150 p c collector dissipation t c =25 10w p c collector dissipation t a =25 1.5w v cbo collector-base voltage 120v v ceo collector-emitter voltage 100v v ebo emitter-base voltage 6v i c collector current 1.5a H1684 to-126ml 1 D emitter e 2 D collector c 3 D base b
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